Homogeneity of Vertical Magnetic Field Applied LEC GaAs Crystal

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概要

• 論文の詳細を見る

• The effect of a vertical magnetic field on both GaAs melt temperature distribution and the homogeneity of LEC GaAs crystals is studied. It is found that although melt flow fluctuations that introduce irregular striations can easily be eliminated, laminar thermal convection cannot be completely suppressed by the magnetic field. This residual laminar thermal convection degrades both microscopic and macroscopic homogeneity of crystals. However, striation-free crystals having a doped Se concentration variation of less than 2.5% across the wafer are obtained by optimizing the seed rotation rate in the presence of such a magnetic field.

• 社団法人応用物理学会の論文
• 1984-04-20

著者

• Osaka Jiro

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Osaka Jiro

  Atsugi Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corp.

• Hoshikawa Keigo

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• KOHDA Hiroki

  Atsugi Electrical Communication Laboratory, Nippon Telegraph and telephone Public Corporation

• KOBAYASHI Takashi

  Atsugi Electrical Communication Laboratory, Nippon Telegraph and telephone Public Corporation

• Kohda H

  Ntt Advanced Technol. Corp. Kanagawa Jpn

• Kobayashi Takashi

  Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Homogeneity of Vertical Magnetic Field Applied LEC GaAs Crystal
• Deep Electron Traps in Undoped Semi-Insulating GaAs Grown by the Liquid Encapsulated Czochralski Method

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