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Advanced Lsi Technology Laboratory Toshiba Corporation | 論文
- A Guideline for Accurate Two-Frequency Capacitance Measurement for Ultra-Thin Gate Oxides
- Advanced SOI MOSFET's with Strained-Si/SiGe Heterostructures(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Strained-Si-on-Insulator (Strained-SOI) MOSFETs-Concept, Structures and Device Characteristics
- Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuation in SOI MOSFETs
- Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits
- New Approach to Negative Differential Conductance with High Peak-to-Valley Ratio in Silicon
- Mobility Enhancement of SOI MOSFETs due to Subband Modulation in Ultrathin SOI Films
- Mobility Enhancement of SOI MOSFETs Due to Subband Modulation in Ultra-Thin SOI Films
- The effect of side-traps on ballistic transistor in Kondo regime
- Random Number Generator with 0.3MHz Generation Rate using Non-Stoichiometric Si_xN MOSFET
- Non-Volatile Doubly Stacked Si Dot Memory with Si Nano-Crystalline Layer
- Influence of Near-Surface Defects in Si Induced by Reactive Ion Etching on the Electrical Properties of the Pt/n-Si Interface
- Estimation of Spatial Extent of a Defect Cluster in Si Induced by Single Ion lrradiation
- Improvement of Memory Characteristics of Metal-Ferroelectrics/Insulating Buffer Layer/Semiconductor Structures by Combination of Pulsed Laser Deposited SrBi_2Ta_2O_9 Films and Ultra-Thin SiN Buffer Layers
- Improvement of Memory Characteristics of MFIS Structures by Combination of Pulsed Laser Deposited SrBi_2Ta_2O_9 Films and Ultra-Thin SiN Buffer Layers
- Analysis of Electromagnetic Wave Scattering by a Conducting Thin Plate and Image Coefficient for Ray Tracing Method
- Analysis of Plane Wave Scattering by a Conducting Thin Plate and a Criterion for Ray Tracing Method
- Wiener-Hopf Solutions to Electromagnetic Wave Scattering by a Finite Conducting Thin Plate in Case of a Line Source
- Precipitation of Boron in Highly Boron-Doped Silicon
- Anomalous Junction Leakage Behavior of Ti Self Aligned Silicide Contacts on Ultra-Shallow Junctions