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Advanced LSI Technology Laboratory, Toshiba Corporation | 論文
- Structure of Ultrathin Epitaxial CeO_2 Films Grown on Si(111)
- Advanced SOI MOSFET's with Strained-Si/SiGe Heterostructures(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Novel Fabrication Technique for Relaxed SiGe-on-Insulator Substrates without Thick SiGe Buffer Structures
- Strained-Si-on-Insulator (Strained-SOI) MOSFETs-Concept, Structures and Device Characteristics
- Formation of SiGe on Insulator Structure and Approach to Obtain Highly Strained Si Layer for MOSFETs
- A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100nm Strained Silicon-on-Insulator MOSFETs
- A Novel Fabrication Technique of Ultra-Thin and Relaxed SiGe Buffer Layers with High Ge Content for Sub-100nm Strained Silicon-on-Insulator MOSFETs
- Quantitative Examination of Mobility Lowering Associated with Ultrathin Gate Oxides in Silicon Metal-Oxide-Semiconductor Inversion Layer
- Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits
- New Approach to Negative Differential Conductance with High Peak-to-Valley Ratio in Silicon
- Mobility Enhancement of SOI MOSFETs due to Subband Modulation in Ultrathin SOI Films
- Mobility Enhancement of SOI MOSFETs Due to Subband Modulation in Ultra-Thin SOI Films
- The effect of side-traps on ballistic transistor in Kondo regime
- Random Number Generator with 0.3MHz Generation Rate using Non-Stoichiometric Si_xN MOSFET
- Non-Volatile Doubly Stacked Si Dot Memory with Si Nano-Crystalline Layer
- Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance
- Highly Accurate Process Proximity Correction Based on Empirical Model for 0.18 μm Generation and Beyond
- Development of An Accurate Optical Proximity Correction System for 1 Gbit Dynamic Random Access Memory Fabrication
- Improvement of Memory Characteristics of Metal-Ferroelectrics/Insulating Buffer Layer/Semiconductor Structures by Combination of Pulsed Laser Deposited SrBi_2Ta_2O_9 Films and Ultra-Thin SiN Buffer Layers
- Improvement of Memory Characteristics of MFIS Structures by Combination of Pulsed Laser Deposited SrBi_2Ta_2O_9 Films and Ultra-Thin SiN Buffer Layers