スポンサーリンク
Advanced Device Development Dept. Renesas Technology Corp. | 論文
- Crystal Structure of the High T_c Superconductor LnBa_2Cu_3O_ (Ln=Sm, Eu and Gd)
- Scalability of Gate/N^- Overlapped Lightly Doped Drain in Deep-Submicrometer Regime
- Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm
- Deep Submicron Field Isolation with Buried Insulator between Polysilicon Electrodes (BIPS) (Special Section on High Speed and High Density Multi Functional LSI Memories)
- Impact of Body Bias Controlling in Partially Depleted SOI Devices with Hybrid Trench Isolation Technology
- A 90nm-node SOI Technology for RF Applications
- 23-P-06 Nano Crystalline and Smooth Surface Epilayer Formations of 3C-SiC at Low Temperatures Using Energetic Ions
- Shadowing Pattern Imaging with High-Energy Secondary Electrons Induced by Fast Ions
- SOI/CMOS Circuit Design for High-Speed Communication LSIs (Special Issue on New Concept Device and Novel Architecture LSIs)
- Proximity Gettering of Heavy Metals by High-Energy Ion Implantation
- New P-MOSFET Hot-Carrier Degradation Model for Bi-Directional Operation
- Effect of Pressure on Mode Transition Point of Reversed Field Pinch Plasma in Partially Relaxed States
- Planar Shadowing of Fast Ion Beams in Si and Ge Crystals Bombarded with 5 keV Ar^+
- High-Sensitivity Channeling Analysis of Lattice Disorder Near Surfaces Using Secondary Electrons Induced by Fast Ions
- Characterization of Epitaxially Grown CeO_2(110) Layers on Si by Means of Shadowing Pattern Imaging with Fast Ion Beams
- Surface Layer Analysis of Sputter-Etched Si Using Secondary Electrons Induced by Fast Ions
- Determination of the Crystallographic Polarity of Zincblende Structure by Using Ion-Induced Secondary Electrons
- Bipolar Transistor with a Buried Layer Formed by High-Energy Ion Implantation for Subhalf-Micron Bipolar-Complementary Metal Oxide Semiconductor LSIs
- Advanced Retrograde Well Technology for 90-nm-Node Embedded Static Random Access Memory Using High-Energy Parallel Beam
- The Effects on Metal Oxide Semiconductor Field Effect Transistor Properties of Nitrogen Implantation into p^+ Polysilicon Gate