スポンサーリンク
Advanced Device Development Dept. Renesas Technology Corp. | 論文
- Well Structure by High-Energy Boron Implantation for Soft-Error Reduction in Dynamic Random Access Memories (DRAMs)
- High-Dose Implantation of MeV Carbon Ion into Silicon
- Au^+-Ion-Implanted Silica Glass with Non-Linear Optical Property
- Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis : Beam-Induced Physics and Chemistry
- Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis
- Preferentially Oriented Crystal Growth in Dynamic Mixing Process : An Approach by Monte Carlo Simulation
- Focused High-Energy Heavy Ion Beams
- Ion-Beam 3C-SiC Heteroepitaxy on Si
- Neutron Activation Analysis of Ultrahigh-Purity Ti-Al Alloys in Comparison with Glow-Discharge Mass Spectrometry
- Epitaxial Growth of Pure ^Si Thin Films Using Isotopically Purified Ion Beams : Semiconductors
- Neutron Activation Analysis of High-Purity Iron in Comparison with Chemical Analysis
- Silicon Carbide Film Growth Using Dual Isotopical ^Si^- and ^C^+ Ion species
- Formation of High Purity films by Negative Ion Beam Sputtering Using an Ultra-high Vacuum Self-Sputtering Method
- Formation of Ultra High Pure Metal Thin Films by Means of a Dry Process
- Macroparticle-Free Ti-Al Films by Newly Developed Coaxial Vacuum Arc Deposition
- Formation of Crystalline SiC Buried Layer by High-Dose Implantation of MeV Carbon Ions at High Temperature
- Operating Conditions to Achieve High Performance in PPCD in a Reversed-Field Pinch Plasma
- Operating Conditions to Achieve High Performance in PPCD in a Reversed-Field Pinch Plasma
- Magnetic Quantum Oscillations Due to Auger Recombination and Shockley-Read Recombination Processes in n-Hg_Cd_xTe
- X-Ray Diffraction Study on the Crystal Structure of Nd_Ba_Cu_3O_ : Electrical Properties of Condensed Matter