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社団法人応用物理学会 | 論文
- Distribution of Grown-in Crystal Defects in Silicon Crystals Formed by Point Defect Diffusion during Melt-Growth : Disappearance of the Oxidation Induced Stacking Faults-Ring
- Thermal Resistivity Changes in Electron-Irradiated Pyrolytic Graphite
- Effect of Steady Bias Light on Carrier Lifetime in Silicon Wafers with Chemically Passivated Surfaces
- Twenty-Five Millisecond Resolution Time-Resolved X-Ray Absorption Spectroscopy in Dispersive Mode
- Oxidation of GaAs Using Helicon-Wave Excited Nitrogen-Oxygen-Argon Plasma
- Raman Lineshape Study of Iodine in Solutions by Circular Polarization Difference Raman Spectroscopy
- A Simple Calculation on Backscattering of Light Ions of KeV Energies
- Effect of Dopant Concentration on Oxidation-Induced Stacking Faults in Boron-Doped CZ Silicon : Semiconductors and Semiconductor Devices
- Experimental Results Obtained using Extreme Ultraviolet Laboratory Tool at New SUBARU
- Axial Microscopic Distribution of Grown-in Defects in Czochralski-Grown Silicon Crystals
- Magnetoresistance Investigation of RIS-II Films
- Diamagnetic Precursor State in High-T_c Oxide Superconductors near Optimal Doping Using Scanning Superconducting Quantum Interference Device Microscopy
- Determination of the Energy Distribution of Grain Boundary Traps in Polycrystalline Silicon Films
- New Efficient Treatment of Impact Ionization in Submicron Metal-Oxide-Semiconductor Field-Effect Transistors
- Electric Field Induced Oscillatory Domains in a Nematic with Positive Dielectric Anisotropy
- Effect of Substrate Temperature on Properties of Glow-Discharged Hydrogenated Amorphous Silicon
- Photoluminescence Analysis of Impurities in Epitaxial Silicon Crystals
- Concentration Dependence of Fluorescence Lifetime of Nd^-Doped Gd_3Ga_5O_ Lasers
- A Study of the Electric Discharge across a Shock Wave : Radiation Intensity Ratio
- Elastic Energy, Stress Field and Interaction of Dislocations in Bismuth Crystal