Effect of Steady Bias Light on Carrier Lifetime in Silicon Wafers with Chemically Passivated Surfaces

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概要

• 論文の詳細を見る

• We found that even a silicon surface chemically passivated with ethanol-iodine solution represents an active state in the recombination process of excess carriers. Hence, the decay of excess carriers is not a simple exponential decay and the time constant of decay depends strongly on the injection level of excess carriers, This injection-dependent nonexponential decay can be eliminated by illumination with a weak steady bias light. In other words, we recommend the use of a bias light illumination for measurements of bulk carrier lifetime with the technique of chemical passivation, since the illumination results in a low surface recombination velocity of below 5.5 cm/s in a wide range of injection level of 1-200%.

• 社団法人応用物理学会の論文
• 1996-02-01

著者

• Maekawa Takao

  Department Of Electronics Chiba Institute Of Technology

• SHIMA Yasushi

  Department of Electronics, Chiba Institute of Technology, Tsudanuma

• MAEKAWA Takao

  Department of Electronics, Chiba Institute of Technology, Tsudanuma

関連論文

• Contactless Measurement of Carrier Lifetime in Silicon Thick Wafers
• Contactless Measurement of Photoinduced Carrier Lifetime and Injection Level in Silicon Wafer Using Additional Eddy Current
• Evaluations of Carrier Lifetime in Silicon Epitaxial Layers Grown on Lightly Doped Substrates
• Evaluation of Effective Recombination Velocity Related to the Potential Barrier in n/n^+ Silicon Epitaxial Wafers
• Effect of Steady Bias Light on Carrier Lifetime in Silicon Wafers with Chemically Passivated Surfaces
• Measurable Range of Bulk Carrier Lifetime for a Thick Silicon Wafer by Induced Eddy Current Method

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