Measurable Range of Bulk Carrier Lifetime for a Thick Silicon Wafer by Induced Eddy Current Method

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概要

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• In contactless measurement for a wide range of bulk carrier lifetime T_b with a single wafer, it is preferable to use the thickest possible wafer since the maximum bulk lifetime is determined by the thickness of the wafer. For thick wafers with short bulk lifetime, the bulk lifetime must be determined after a reasonable time delay of photoconductive decay to avoid the effect of higher-order-mode recombination with shorter time constants. The appropriate range is examined in terms of the voltage signal during the photoconductive decay by computer simulations and experiments. It is shown that the measurable range is between 1/10 and 1/20 of the maximum voltage, i.e., T_b=0.73-11 ms for p-type and T_b=2.1-32 ms for n-type Si wafers with thickness 20 mm subject to non-monochro-matic illumination of long duration.

• 社団法人応用物理学会の論文
• 1995-08-15

著者

• Fujiwara Keisuke

  Department Of Electronics Chiba Institute Of Technology

• Maekawa Takao

  Department Of Electronics Chiba Institute Of Technology

関連論文

• Contactless Measurement of Carrier Lifetime in Silicon Thick Wafers
• Contactless Measurement of Photoinduced Carrier Lifetime and Injection Level in Silicon Wafer Using Additional Eddy Current
• Evaluations of Carrier Lifetime in Silicon Epitaxial Layers Grown on Lightly Doped Substrates
• Evaluation of Effective Recombination Velocity Related to the Potential Barrier in n/n^+ Silicon Epitaxial Wafers
• Effect of Steady Bias Light on Carrier Lifetime in Silicon Wafers with Chemically Passivated Surfaces
• Measurable Range of Bulk Carrier Lifetime for a Thick Silicon Wafer by Induced Eddy Current Method

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