Evaluation of Effective Recombination Velocity Related to the Potential Barrier in n/n^+ Silicon Epitaxial Wafers
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概要
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For silicon n/n^+ epitaxial wafers (36/0.017Ωcm), the effective recombination velocity S_<nn^+> related to the potential barrier height at the n/n^+ interface has been studied by detecting the leakage currents which are collected at Schottky barrier diodes formed on the substrate. The experimental results obtained are S_<nn^+> = 10.6-21.8cm/s, which increases linearly with increasing photo-generated carrier concentration in the epitaxial layer. These values may be slightly smaller than the real values of effective recombination velocity at the interface, because the recombination effect in the n/n^+ transition layer is not taken into account the experimental results. The experimental values are about five times the values expected from a theoretical analysis. These results are discussed in relation to the potential barrier height at the n/n^+ junction. [DOI: 10.1143/JJAP.41.1214]
- 社団法人応用物理学会の論文
- 2002-03-15
著者
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Takahashi Hidenori
Department Of Applied Biological Sciences Faculty Of Science And Technology Tokyo University Of Scie
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Maekawa T
Department Of Electronics Chiba Institute Of Technology
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Maekawa Takao
Department Of Electronics Chiba Institute Of Technology
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