New Efficient Treatment of Impact Ionization in Submicron Metal-Oxide-Semiconductor Field-Effect Transistors

スポンサーリンク

概要

• 論文の詳細を見る

• Shockley's lucky electron model has been widely used for modeling impact ionization. Various nonlocal generalizations of this model have been proposed in order to model impact ionization more accurately for strongly inhomogeneous material and field conditions which exist, e.g., in n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). Recently it has been shown that the spatial distribution of impact ionization events resulting from the nonlocal variant is in close agreement with corresponding results derived from an advanced Monte Carlo model. However, the former lucky electron model fails to closely reflect the underlying microscopic processes and is based on the restrictive assumption that the electron trajectories are electrostatic field lines. In order to incorporate more microscopic features, an improved lucky electron modeling approach including ballistic and diffusive transport effects is proposed, which yields comparably favorable results if compared to Monte Carlo data.

• 社団法人応用物理学会の論文
• 1992-12-15

著者

• Fukuda Koichi

  VLSI Research and Development Center, OKI Electric Industry Company, Ltd.

• THOMA Rainer

  Institut fur Theoretische Elektrotechnik, University of Aachen

• PEIFER Hermann-Josef

  Institut fur Theoretische Elektrotechnik, University of Aachen

• MEINERZHAGEN Bernd

  Institut fur Theoretische Elektrotechnik, University of Aachen

• ENGL Walter

  Institut fur Theoretische Elektrotechnik, University of Aachen

• FUKUDA Koichi

  VLSI R & D Center, Oki Electric Industry Co., Ltd.,

関連論文

• A New Wide Applicable Mobility Model for Device Simulation Taking Physics-Based Carrier Screening Effects into Account
• New Efficient Treatment of Impact Ionization in Submicron Metal-Oxide-Semiconductor Field-Effect Transistors

スポンサーリンク