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社団法人応用物理学会 | 論文
- Electroabsorption in ZnTe Doped with In or Al
- Influence of Line Profile on Counting Loss Correction
- Electronic Structures of PbTiO_3: II. Properties of Pb Ion Displacement
- Improvement of Resolving Power of a Large High Resolution Mass Spectrometer
- Secondary Electron Spectra Changes and Work Function Measurements for Oxygen on Ni(111)
- Electron Microscopic Study of Alloying Behavior or Au on GaAs
- Monte Carlo Simulations on Scattering of Bombarded Ions in Solids
- Investigation of Energy Dissipation of Electrons in Al- and Cu-Targets by Monte Carlo Method
- Smectic Liquid Crystal Imaging Devices Based on a Photochemical Reaction
- Operating Characteristics of Large Diameter Photomultipliers, II. : Noise
- Cavity's Surface Conductivity Dependence of the Repetition Rate of the D.C. Partial Discharge
- Emission Cross Sections of Excited Fragments Produced by 0-100 eV Electron Impact on SiH_4 : Application of the "He Standard"
- Photoluminescence in Hydrogenated Amorphous Carbon Films Prepared at Room Temperature
- High Efficiency Double Sided Buried Contact Silicon Solar Cells
- Sticking Coefficients and Critical Condensation Conditions of Nickel on Polyfluoroethylene-Propylene
- Novel Hexagonal-Facet GaAs/AlGaAs Laser Grown by Selective Area Metalorganic Chemical Vapor Deposition
- Triangular-Facet Laser with Optical Waveguides Grown by Selective Area Metalorganic Chemical Vapor Deposition
- High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy
- Si LPE Lateral Overgrowth from a Ridge Seed
- Formation of He_2 Molecules in the Early Afterglow of He Pulsed Discharge