Electroabsorption in ZnTe Doped with In or Al

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概要

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• The energy levels of Zn vacancies in ZnTe are determined by the electroabsorption measurements of undoped and donor (In or Al)-doped ZnTe. The acceptor levels of Zn vacancies are compensated by doping with donors. The observed signals are due to electron transitions from the compensated acceptor levels to the conduction band. The spectra of lightly In-doped ZnTe show a small peak at 2.206 eV (300 K) or at 2.295 eV (110 K). In the case of heavily In-doped ZnTe, a small peak is observed at 2.129 eV (300 K) or at 2.221 eV (110 K). The peak of lightly In-doped ZnTe is due to the first ionized level of Zn vacancies, while the peak of heavily In-doped ZnTe to the second ionized level. The band-gap energy of ZnTe is determined to be 2.267 eV (300 K) and 2.360 eV (110 K) by the electroreflectance measurements. From the data at 300 K the first and the second ionization energies of the Zn vacancy level are determined to be 0.061 eV and 0.138 eV, respectively.

• 社団法人応用物理学会の論文
• 1978-10-05

著者

• Kase Kunio

  Department Of Electronics North Shore College

• Kase Kunio

  Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo

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• Electroabsorption in ZnTe Doped with In or Al

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