High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy

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Ultraviolet (UV) light-emitting diodes (LEDS) with an InGaN multi-quantum-well (MQW) structure were fabricated on a patterned sapphire substrate (PSS) using a single growth process of metalorganic vapor phase epitaxy. In this study, the PSS with parallel grooves along the (1120)_<sapphire>, direction was fabricated by standard photolithography and subsequent reactive ion etching (RIE). The GaN layer grown by lateral epitaxy on a patterned substrate (LEPS) has a dislocation density of 1.5 x 10^8 cm^2. The LEPS-UV-LED chips were mounted on the Si bases in a flip-chip bonding arrangement. When the LEPS-UV-LED was operated at a forward-bias current of 20 mA at room temperature, the emission wavelength, the output power and the external quantum efficiency were estimated to be 382 nm, 15.6 mW and 24%, respectively. With increasing forward-bias current, the output power increased linearly and was estimated to be approximately 38 mW at 50 mA.
社団法人応用物理学会の論文
2001-06-15