Electron Microscopic Study of Alloying Behavior or Au on GaAs

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概要

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• Still and in-situ electron microscopic studies of the deposition and the alloying behavior of Au on GaAs have been made. Au was found to react with GaAs at 〜470℃ forming new compound with composition very close to Au_7Ga_2 (and/or GaAu with Ga=21 at%). The higher alloying temperature and longer alloying time (〜2-3 min. at 600℃) resulted in large size of the alloyed region. Asymmetric etching of the (001) GaAs surfaces during high temperature treatment was also observed to take place; this was attributed to the asymmetric nature of [110] and [11^^-0] directions on the (001) surfaces.

• 社団法人応用物理学会の論文
• 1979-04-05

著者

• Kumar Krishna

  Physics Department Tennessee Technological University

• KUMAR Krishna

  Physics Department, Tokyo Institute of Technology:(Present address)Rectifier Division, Nippon Electric Company Ltd.

関連論文

• X-Ray Topographic Study of the Defects in GaAs Epi-Layers Grown by Liquid Phase Epitaxial Method. II.
• Dynamic Deformation Model of Nuclear Collective Motions
• Electron Microscopic Study of Alloying Behavior or Au on GaAs

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