X-Ray Topographic Study of the Defects in GaAs Epi-Layers Grown by Liquid Phase Epitaxial Method. II.

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1978-02-05

著者

• Takagi Mieko

  Physics Department, Tokyo Institute of Technology

• Takagi Mieko

  Physics Department Tokyo Institute Of Technology

• KUMAR Krishna

  Physics Department, Tokyo Institute of Technology

• Kumar Krishna

  Physics Department Tokyo Institute Of Technology

• Kumar Krishna

  Physics Department Tennessee Technological University

関連論文

• Density vs. Exposure Curves of a Photographic Emulsion for 20〜200kV Electrons
• Streak Pattern of Electron Diffraction from Single Crystal Films
• Electron-Diffraction Study of the Structure of Supercooled Liquid Bismuth
• X-Ray Topographic Study of the Defects in GaAs Epi-Layers Grown by Liquid Phase Epitaxial Method. II.
• Dynamic Deformation Model of Nuclear Collective Motions
• Electron Microscopic Study of Alloying Behavior or Au on GaAs

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