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社団法人応用物理学会 | 論文
- Switching Process in Ferroelectric Liquid Crystals; Disclination Dynamics of the Surface Stabilized States
- Copper Oxide Thin Films Prepared from Copper Dipivaloylmethanate and Oxygen by Chemical Vapor Deposition
- Dependence of the Phonoionization of A^+-States in Si on Uniaxial Pressure : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Metals and Semiconductors
- Circuits for Power Density Reduction in TRAPATT Diodes
- Electrical Resistivity of Undoped GaAs Single Crystals Grown by Magnetic Field Applied LEC Technique
- The Enhanced Diffusion of Low-Concentration Phosphorus, Arsenic and Boron in Silicon during IR-Heating
- Advantages of Fluorine Introduction in Boron Implanted Shallow p^+/n-Junction Formation
- Growth and Properties of Low Pressure Chemical-Vapor-Deposited TiN for Ultra Large Scale integration
- Dual-Level High-Pressure Clamp-Anvil Apparatus at Low Temperatures
- A Set of De-Excitation Rate Coefficients for the 3s ^3P_2 and ^3P_1 Levels of Neon
- Static and Dynamic Characteristics of Electrooptic Bistable Devices
- Modulation Doped GaAs-Ga_Al_xAs Heterostructures Grown by Atmospheric Pressure MOVPE
- Thinner Silicon-on-Insulator Using Plasma Hydrogenation
- A Simple Graphic Method for Evaluating Densities and Energy Levels of Impurities in Semiconductor from Temperature Dependence of Majority-Carrier Concentration
- Electron-Bombardment Induced Annealing Stages in n-Type Germanium II
- Employing Two Unique Schemes to Investigate the Beam Lifetime in Storage Rings
- Propagation Behaviour of Three-Wave-Mixing Light in an Isotropic Medium
- Picosecond HEMT Pholodetector
- A Theory of Liquid ^4He : I. QUANTUM LIQUIDS AND SOLIDS : Liquid ^4He and ^3He-^4He
- Substitutional Diffusion of Transition Metal Impurities in Silicon