Growth and Properties of Low Pressure Chemical-Vapor-Deposited TiN for Ultra Large Scale integration

概要

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This paper reviews recent studies of the low-temperature chemical vapor deposition of titanium nitride thin films suitable for ULSI applications. In addition to the comprehensive studies available for films grown thermally from TiCl_4 and NH_3, films deposited from organometallic precursors are discussed, as well as those derived from plasma-enhanced techniques. Two applications of such films for ULSI are as a diffusion barrier between different conductors, and as a nucleation layer for CVD tungsten. Properties of LPCVD TiN for these applications, are covered including film conformality, effectiveness as a diffusion barrier, contact resistance, nucleation of tungsten, and the influence of any residual chlorine.
社団法人応用物理学会の論文
1991-12-30