Thinner Silicon-on-Insulator Using Plasma Hydrogenation
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概要
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We describe for the first time delamination of a single crystalline silicon film from a substrate caused by the formation of a hydrogen layer under the surface due to dc plasma hydrogenation of a trap layer. The process involves first forming a buried trap layer by implanting ions of gases in doses of 1 x l0^<15> cm 2 to 4 x 10^<16> cm^<-2>, and then hydrogenating with a dc plasma. Following thermal annealing, delamination occurs with a depth corresponding to the maximum of vacancy-enriched defects (about R_p/2) for the lowest implantation doses and up to R_p for the high implantation doses. This process may be used as a step in the process of fabricating thin silicon-on-insulator (SOI) wafers. The authors suggest that vacancy clusters at R_p/2 serve as nuclei of hydrogen platelets that continue to grow under hydrogenation and act as infinite-capacity traps for hydrogen.
- 社団法人応用物理学会の論文
- 2002-08-15