Circuits for Power Density Reduction in TRAPATT Diodes

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概要

• 論文の詳細を見る

• Experiments have been performed using a single frequency tuned coaxial cavity for a TRAPATT oscillator. It is shown that increasing the bias source impedance results in a lowered dissipated power density. In general the efficiency will also be lowered, but if for each case the r.f. load is increased to the highest value permitted with respect to premature avalanching an efficiency which is approximately independent of the bias resistance is obtained. Using this technique it has been possible to decrease the dissipated power from an initial value of about 100 to less than 15 W. Results on the effect of waveshaping by higher harmonic loading are also presented. The starting mechanism in TRAPATT oscillators is also studied and shown to consist of an interaction between successively reflected bias pulses and wave trains of IMPATT oscillation.

• 社団法人応用物理学会の論文
• 1973-02-05

著者

• KERZAR Boris

  Microwave Institute Foundation

• WEISSGLAS Peter

  Microwave Institute Foundation

関連論文

• Circuits for Power Density Reduction in TRAPATT Diodes

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