Modulation Doped GaAs-Ga_<1-x>Al_xAs Heterostructures Grown by Atmospheric Pressure MOVPE

スポンサーリンク

概要

• 論文の詳細を見る

• Single and multiple period modulation doped GaAs-Ga_<1-x>Al_xAs heterostructures have been grown by atmospheric pressure metalorganic vapour phase epitaxy (AP-MOVPE). Single period structures exhibit electron mobilities of 6700, 80000 and 90000 cm^2・V^<-1>・s^<-1> at 300 K, 77 K, and 4 K for a sheet carrier concentration of 7.4×10^<11> cm^<-2>, 8.3×10^<11> cm^<-2> and 3.9×10^<11> cm^<-2> respectively. To our knowledge, these values represent the best mobilities reported in this structure grown by AP-MOVPE. Preliminary results on field effect transistors show a three fold increase of transconductance as temperature decreases from ambient to 77 K. Furthermore, we report mobility enhancement in "inverted" structures in which the conducting accumulation layers are located at the interfaces formed by growth of GaAs on top of (Ga, Al)As.

• 社団法人応用物理学会の論文
• 1983-03-20

著者

• Maluenda J.

  Laboratoires D'electronique Et De Physique Appliquee

• FRIJLINK P.M.

  Laboratoires d'Electronique et de Physique Appliquee

関連論文

• GaAs Substrate Material Assessment Using a High Lateral Resolution MESFET Test Pattern
• MOVPE Growth of Ga_Al_xAs-GaAs Quantum Well Heterostructures
• Modulation Doped GaAs-Ga_Al_xAs Heterostructures Grown by Atmospheric Pressure MOVPE

スポンサーリンク