MOVPE Growth of Ga_<1-x>Al_xAs-GaAs Quantum Well Heterostructures

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概要

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• Ga_<1-x>Al_xAs-GaAs quantum wells are grown by MOVPE. Wells as narrow as 25 Å are made. Interface quality in relation to alloy clustering and abruptness in change of Al-content are characterized with the aid of luminescence spectrum measurements. A remarkable agreement is found between the experimental n=1 electron to heavy hole transition energies and those which are calculated with the simple rectangular well model. The results indicate that the Al-content changes at the interfaces over less than one unit cell.

• 社団法人応用物理学会の論文
• 1982-09-20

著者

• Frijlink P.

  Laboratoires D'electronique Et De Physique Appliquee

• Maluenda J

  Laboratoires D'electronique Et De Physique Appliquee

• Maluenda J.

  Laboratoires D'electronique Et De Physique Appliquee

関連論文

• GaAs Substrate Material Assessment Using a High Lateral Resolution MESFET Test Pattern
• MOVPE Growth of Ga_Al_xAs-GaAs Quantum Well Heterostructures
• Modulation Doped GaAs-Ga_Al_xAs Heterostructures Grown by Atmospheric Pressure MOVPE

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