GaAs Substrate Material Assessment Using a High Lateral Resolution MESFET Test Pattern

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概要

• 論文の詳細を見る

• The uniformity of the threshold voltage V_T of MESFETs fabricated on a variety of LEC-grown semi-insulating GaAs wafers was investigated. Microscopic uniformity data with a high lateral resolution of 10 μm are reported as well as macroscopic variations. It is demonstrated that the value of V_T can be a monotonic function of the FET position even for areas as small as 20 μm. Variations below 20 μm are superimposed. On the macroscopic scale the typical W-shaped profile of V_T for Cr-doped GaAs over the wafer can be suppressed by the use of undoped GaAs even with conventional EPD. In low dislocation density In-doped GaAs the microscopic as well as the macroscopic scattering of V_T is drastically reduced.

• 社団法人応用物理学会の論文
• 1986-05-20

著者

• MARTIN G.

  Laboratory of Analytical Pharmaceutical Chemistry, Bioanalytical Chemistry Research Unit, University

• Schink H.

  Siemens Ag

• PACKEISER G.

  Laboratoires d'Electronique et de Physique Appliquee

• MALUENDA J.

  Laboratoires d'Electronique et de Physique Appliquee

• Maluenda J

  Laboratoires D'electronique Et De Physique Appliquee

• Maluenda J.

  Laboratoires D'electronique Et De Physique Appliquee

• Packeiser G.

  Laboratoires D'electronique Et De Physique Appliquee

• Martin G.

  Laboratory Of Analytical Pharmaceutical Chemistry Bioanalytical Chemistry Research Unit University O

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