Substitutional Diffusion of Transition Metal Impurities in Silicon

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概要

• 論文の詳細を見る

• Near-surface Cu and Ni rich layers are observed by secondary ion mass spectroscopy (SIMS) in intentionally contaminated silicon wafers after thermal oxidation at 950℃ for 35 min. The diffusivities of Cu and Ni obtained from their respective SIMS profiles are almost 9 orders of magnitude smaller than documented which are widely believed of interstitials, but comparable to that of Group III and V atoms which are known as substitutional. According to the experimental results, a model is proposed for in-diffusion of transition metal atoms contaminated on the surface of a silicon wafer during thermal oxidation. In this model, the interstitial and substitutional atoms diffuse independently and the slow substitutional diffusion gives rise to a near-surface impurity-rich layer.

• 社団法人応用物理学会の論文
• 1993-08-15

著者

• ZHONG L.

  Department of Materials Science and Engineering, North Carolina State University

• SHIMURA F.

  Department of Materials Science and Engineering, North Carolina State University

関連論文

• Substitutional Diffusion of Transition Metal Impurities in Silicon

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