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社団法人応用物理学会 | 論文
- Photoelectric Properties of Oxygen-Doped a-Si:H Prepared by rf Sputtering
- Critical Radial Temperature Gradient Inducing Slip Dislocations in Silicon Epitaxy Using Dual Heating of the Two Surfaces of a Wafer
- Effect of Temperature Gradient Annealing on Bismuth Single Crystal
- Detection of Defects in Irradiated Silicon Oxide by X-Ray Photo-Electron Spectrum Difference
- Interfaces as a Field for Arranging Organic Molecules
- Grating-Type Optical Deflector Using (Pb, La)(Zr, Ti)O_3 Ceramics
- Stress Distributions of Coils for Toroidal Magnetic Field
- A Model for the Formation of Oxidation-Induced Stacking Faults in Czochralski Silicon
- High-Pressure Synthesis of Ca_Sr_xCuO_2
- Optical Properties of Plasma-Deposited Silicon-Oxygen Alloy Films
- On the Supersaturation in a Diffusion Chamber
- Piezoelectric Ceramics of Pb(Zr-Ti)O_3 Modified by A^B^O_3 or A^B^O_3
- Zero-Field Time-of-Flight Measurements of Electron Diffusion in P^+-GaAs
- Intermetal Dielectric Gap Fill by Plasma Enhanced Chemical Vapor Deposited Fluorine-Doped Silicon Dioxide Films
- Fine Particles of Titanium Prepared by Gas Evaporation
- A Modification for X-Ray Diffraction Topography of Oscillating Method Using Monochromatic Divergent Beams
- Spatial Correlation of Gaussian Beam in Moving Ground Glass
- Growth Process of Polyhedral Oxide Precipitates in Czochralski Silicon Crystals Annealed at 1100℃
- Resolution of the Field-Ion Microscope
- Atomic-Layer Etching of a Br-Saturated Si(111)-7×7 Surface by Using Scanning Tunneling Microscope