Intermetal Dielectric Gap Fill by Plasma Enhanced Chemical Vapor Deposited Fluorine-Doped Silicon Dioxide Films

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概要

• 論文の詳細を見る

• Fluorine-doped tetra-ethoxy-ortho-silicate (F-TEOS) silicon dioxide films were deposited using a dual frequency multi-station sequential plasma enhanced chemical vapor deposition (PECVD) system. F-TEOS films with various Si-F content were deposited using mixture of vaporized TEOS, O_2 and C_2F_6. The Si-F content and gap filling capability of F-TFOS films was investigated under various deposition conditions. The gap filling capability was found to be dependent upon wafer temperature, pressure and gas phase reactant concentrations, but is predominantly dependent on Si-F content. Aspect ratios (AR: height of metal lines versus spacing between metal lines) up to 1.35:1 with 0.25 μm spacing were filled with no observable seams and voids.

• 社団法人応用物理学会の論文
• 1996-03-01

著者

• Yoo Woo

  Novellus Systems Inc.

• SWOPE Richard

  Novellus Systems, Inc.

• Swope Richard

  Novellus Systems Inc.

関連論文

• Carbon Contamination Levels in Plasma-Enhanced Chemical Vapor Deposited Fluorinated Silica Glasses
• Plasma Enhanced Chemical Vapor Deposition and Characterization of Fluorine Doped Silicon Dioxide Films
• Intermetal Dielectric Gap Fill by Plasma Enhanced Chemical Vapor Deposited Fluorine-Doped Silicon Dioxide Films

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