Carbon Contamination Levels in Plasma-Enhanced Chemical Vapor Deposited Fluorinated Silica Glasses

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概要

• 論文の詳細を見る

• In this study, the carbon levels in fluorinated silica glass (FSG) films were investigated. FSG films were deposited using a dual-frequency sequential-deposition plasma-enhanced chemial vapor deposition (PECVD) reactor using TEOS, O_2 and C_2F_6 as source reagents. It was found that FSG films have substantially lower carbon levels than undoped PECVD TEOS-based silicon dioxide films. Carbon content was also found to be dependent on the fluorine content in the films.

• 社団法人応用物理学会の論文
• 1996-11-15

著者

• Yoo Woo

  Novellus Systems Inc.

• SWOPE Richard

  Novellus Systems, Inc.

• Swope Richard

  Novellus Systems Inc.

• Swope R

  Novellus Systems Inc. Ca Usa

関連論文

• Carbon Contamination Levels in Plasma-Enhanced Chemical Vapor Deposited Fluorinated Silica Glasses
• Plasma Enhanced Chemical Vapor Deposition and Characterization of Fluorine Doped Silicon Dioxide Films
• Intermetal Dielectric Gap Fill by Plasma Enhanced Chemical Vapor Deposited Fluorine-Doped Silicon Dioxide Films

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