Detection of Defects in Irradiated Silicon Oxide by X-Ray Photo-Electron Spectrum Difference

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概要

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• This letter shows that binding energy for Si2_p photoelectrons in oxide with defects induced by X-ray irradiation decreases. Moreover, binding energy in wet thermal oxide grown at 820℃ also decreases with decreasing oxide thickness.

• 社団法人応用物理学会の論文
• 1994-05-15

著者

• Nakabayashi Masakazu

  Kita-itami Works Mitsubishi Electric Corporation

• YAMAGUCHI Takao

  Kita-Itami Works, Mitsubishi Electric Corporation

関連論文

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• Detection of Defects in Irradiated Silicon Oxide by X-Ray Photo-Electron Spectrum Difference

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