Effect of Temperature Gradient Annealing on Bismuth Single Crystal
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概要
- 論文の詳細を見る
A new technique of annealing has been applied to a single crystal of bismuth in order to decrease dislocations; the crystal is provided with any temperature gradient along the longitudinal axis. After the dislocation density of the sample is saturated by pre-annealing at a constant temperature, it begins to decrease again by temperature gradient annealing. The saturated dislocation density after constant temperature annealing at 255℃ is 1.28×10^5/cm^2 on the (221^^-) plane and 0.92×l0^5/cm^2 on the (111) plane, respectively. When this sample is annealed with a temperature gradient for 24 hours, the dislocation densities of the two planes are decreased to 0.48×10^5/cm^2 and 0.58×10^5/cm^2, respectively.
- 社団法人応用物理学会の論文
- 1975-07-05
著者
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Otake Shuichi
Department Of Physics Faculty Of Science Science University Of Tokyo
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Koike Shigetoshi
Department Of Physics Faculty Of Science Science University Of Tokyo
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Matsuno Naoshi
Department Of Physics Faculty Of Science Science University Of Tokyo
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OTAKE Shuichi
Department of Physics, Faculty of Science, Science University of Tokyo
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