Zero-Field Time-of-Flight Measurements of Electron Diffusion in P^+-GaAs

スポンサーリンク

概要

• 論文の詳細を見る

• Minority electron diffusivities in p^+-GaAs-doped N_A≃1.4×10^<18> and 〜10^<19>cm^<-3> have been measured in zero-field conditions with an extension of the zero-field time-of-flight technique. Extension of the technique to make it applicable to heavily doped p^+-GaAs is described and zero-field data are discussed. Unexpectedly, majority carrier drag effects are not evident in a comparison of this data with recently reported high-field data. Low zero-field mobility of electrons in p^+-GaAs has important implications for high-speed devices succh as heterojunction bipolar transisters.

• 社団法人応用物理学会の論文
• 1991-02-01

著者

• Melloch M.R.

  Purdue Univ.

• Klausmeier-Brown M.E.

  Varian Research Center

• Lundstrom M.S.

  Purdue University

• Lovejoy M.L.

  Purdue University

• Keyes B.M.

  Solar Energy Research Institute

• Ahrenkiel R.K.

  Solar Energy Research Institute

関連論文

• 8p-E-7 半導体中での金属クラスター形成過程への伝導電子・正孔の影響
• Physics and Applications of Metallic Arsenic Clusters in GaAs Based Layer Structures
• Zero-Field Time-of-Flight Measurements of Electron Diffusion in P^+-GaAs

スポンサーリンク