Growth Process of Polyhedral Oxide Precipitates in Czochralski Silicon Crystals Annealed at 1100℃

概要

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The growth process of polyhedral oxide precipitates in Czochralski (CZ) silicon crystals has been studied with annealing at 1100℃ from 4 h to 16 h, after preannealing at 900℃ for 4 h. It was found, from transmission electron microscopy (TEM) observations, that the growth of polyhedral precipitates follows a t^<1/2> law. At 1100℃, the concentration of oxygen interstitials at the interface (C^i_O) is estimated to be 1.2 times the thermal equilibrium concentration (C^*_O) on the basis of a theoretical model of oxygen precipitation in silicon. The growth of polyhedral precipitates is explained quantitatively by a diffusion-limited growth model of a spherical precipitate, using the estimated C^i_O.
社団法人応用物理学会の論文
1994-11-01