Atomic-Layer Etching of a Br-Saturated Si(111)-7×7 Surface by Using Scanning Tunneling Microscope

概要

論文の詳細を見る
Atomic-layer etching of Br-saturated Si(111) surfaces has been achieved by using scanning tunneling microscope at room temperature. At a Br_2 dose of 100L, most of the Si adatoms are saturated with Br atoms, while the 7×7 structure is completely retained. At further Br_2 doses up to 400 L, most of the Si adatoms are removed during the tip scanning at a sample bias of +3 V, and the underlying rest-atom layer is imaged. The adatoms remaining on the scanned surface are dominantly SiBr and SiBr_2 species, suggesting that highly brominated adatoms like SiBr_3 or SiBr_4 are more likely etched away during the tip scanning. These highly brominated silicon adatoms are not volatile at room temperature, but easily desorb through the field evaporation under the usual scan mode.
社団法人応用物理学会の論文
1999-01-15