Deposition Yield and Physical Properties of Carbon Films Deposited by Focused-Ion-Beam Chemical Vapor Deposition
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概要
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The deposition yield and physical properties of carbon films fabricated by focused-ion-beam (FIB) chemical vapor deposition were examined using several ion beam species of hydrogen, helium, xenon, and gallium. A gas-FIB was generated using an inductively coupled plasma ion source. It was found that the deposition yield is proportional to the total stopping power of the beam that penetrates into the carbon film. The physical properties of the carbon films deposited using gas-FIB are similar to those of films deposited using Ga-FIB, except for the Young’s modulus.
- 2010-06-25
著者
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SUGIYAMA Yasuhiko
SII NanoTechnology Inc.
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Kazuhiro Kanda
University of Hyogo, Kamigori, Hyogo 678-1205, Japan
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Jun-ichi Fujita
University of Tsukuba, Tsukuba, Ibaraki 305-8577, Japan
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Takashi Kaito
SII NanoTechnology Inc., Oyama, Shizuoka 410-13, Japan
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Kaito Takashi
SII Nano Technology Inc., 36-1 Takenoshita, Oyama, Shizuoka 410-1393, Japan
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Shinji Matsui
University of Hyogo, Kamigori, Hyogo 678-1205, Japan
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Anto Yasaka
SII NanoTechnology Inc., Oyama, Shizuoka 410-13, Japan
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Oba Hiroshi
SII NanoTechnology Inc., Oyama, Shizuoka 410-13, Japan
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Tsuneo Suzuki
Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan
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Kazuhiro Kanda
University of Hyogo, 3-1-2 Koto, Kamigori, Hyogo 678-1205, Japan
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Yasuhiko Sugiyama
SII NanoTechnology Inc., Oyama, Shizuoka 410-13, Japan
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KAITO Takashi
SII Nano Technology Inc.
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