Direct Patterning on Sol–Gel Low-$k$ Porous Silica by Thermal Nanoimprinting

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The direct patterning of low-dielectric constant (low-$k$) materials via nanoimprint lithography (NIL) has the potential to simplify fabrication processes and significantly reduce the manufacturing costs of semiconductor devices. It is known that a low $k$ is realized by introducing a large number of nanoscale pores into a material. We demonstrated nanoimprinting on a sol–gel low-$k$ material ($k\sim 2.0$) formed using methyl silicate as a siloxane oligomer source and surfactants as a pore template. As a result, 200-nm-linewidth mold patterns were successfully transferred onto the sol–gel low-$k$ material by thermal nanoimprinting at 200 °C. However, pattern shrinkage was observed. The imprinted pattern linewidth was 180 nm. We assumed from the Fourier transform infrared spectroscopy (FT-IR) spectra of the sol–gel film before and after baking that the pattern shrinkage was induced by the condensation reaction.
2010-06-25