Nanoimprint Mold Repair by Ga+ Focused-Ion-Beam Direct Etching
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概要
- 論文の詳細を見る
Nanoimprint lithography (NIL) Si molds with protrusion- and hollow-defects were repaired by Ga+ focused-ion-beam (FIB) direct etching and chemical-vapor-deposition (CVD). The usability of the repaired mold was confirmed by carrying out NIL on poly(methylmethacrylate) (PMMA). After the NIL process, Ga grains appeared on the etching-repaired mold, which was confirmed by scanning electron microscopy-energy dispersive spectrometry (SEM-EDS). The thresholds of ion dose and annealing temperature for Ga grain appearance are studied.
- 2004-11-15
著者
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Kanda Kazuhiro
University Of Hyogo Laboratory Of Advanced Science And Technology For Industry
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HARUYAMA Yuichi
University of Hyogo, Graduate School of Science, LASTI
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KAITO Takashi
SII NanoTechnology Inc.
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Watanabe Keiichiro
University Of Hyogo Graduate School Of Science Lasti
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Matsui Shinji
University Of Hyogo
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Kanda Kazuhiro
University of Hyogo, Graduate School of Science, LASTI, 3-1-2 Koto, Kamigori, Ako, Hyogo 678-1205, Japan
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Haruyama Yuichi
University of Hyogo, Graduate School of Science, LASTI, 3-1-2 Koto, Kamigori, Ako, Hyogo 678-1205, Japan
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Haruyama Yuichi
University of Hyogo, Graduate School of Science, Laboratory of Advanced Science and Technology for Industry (LASTI), 3-1-2 Koto, Kamigori, Hyogo 678-1205, Japan
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Kaito Takashi
SII Nano Technology Inc., 36-1 Takenoshita, Oyama, Shizuoka 410-1393, Japan
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Watanabe Keiichiro
University of Hyogo, Graduate School of Science, LASTI, 3-1-2 Koto, Kamigori, Ako, Hyogo 678-1205, Japan
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KAITO Takashi
SII Nano Technology Inc.
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