Electrical Characteristics of Metal–Ferroelectric–Semiconductor Structures Based on Poly(vinylidene fluoride)
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概要
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We prepared poly(vinylidene fluoride) (PVDF) films in the $\beta$ phase by a sol–gel method using PVDF solutions with different weight fractions. The electrical properties of PVDF films were studied for the possibility of using them in one-transistor (1-T)-type ferroelectric random-access memories (FRAMs). In this research, the Au/PVDF/Si structure made from PVDF solution of 6 wt % concentration showed good ferroelectric and electrical properties. The memory window width and current density for the PVDF film from the 6 wt % PVDF solution were about 1.8 V and $10^{-6}$ A/cm2 for a bias voltage of 5 V, respectively. It is expected from these good ferroelectric properties that PVDF films will be suitable for low-cost 1-T-type FRAMs operating at a low voltage.
- 2007-10-30
著者
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Park Byung
Department Of Biochemistry Medical School Chonbuk National University
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Kim Jeong
Department Of Anatomy Wonkwang University School Of Medicine
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Kim Dong
Department Of Anatomy School Of Medicine Kyungpook National University
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Jeon Ho
Department of Electrical and Computer Engineering, University of Seoul, 90 Jeonnong-dong, Dongdaemun-gu, Seoul 130-743, Korea
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Kim Dong
Department of Electrical and Computer Engineering, University of Seoul, 90 Jeonnong-dong, Dongdaemun-gu, Seoul 130-743, Korea
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