High Performance of Ultralow Temperature Polycrystalline Silicon Thin Film Transistor on Flexible Metal Foil Substrate
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概要
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A high performance ultralow temperature polycrystalline silicon (poly-Si) thin film transistor (TFT) was obtained on a flexible metal foil substrate using the optimization of a benzocyclobutene (BCB) planarization process for a rough flexible metal foil substrate surfaces, the high quality SiO2 interface layer formation between the gate dielectric film and the poly-Si film using plasma oxidation, and a successful crystallization of large grain poly-Si films with a sequential lateral solidification (SLS) method. High performances with field effect mobilities of 196 and 95 cm2 V-1 s-1, threshold voltages of 1.6 and $-1.5$ V and sub-threshold swings of 0.53 and 0.45 V/decade were obtained for n-channel metal–oxide–semiconductor (nMOS) and p-channel metal–oxide–semiconductor (pMOS) TFT on flexible metal foil substrate, respectively.
- 2010-05-25
著者
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Park Byung
Department Of Biochemistry Medical School Chonbuk National University
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Park Dong
Department Of Acupuncture & Moxibustion College Of Oriental Medicine
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Byung Ok
Department of Electronic Materials Engineering, Kyungpook National University, 1370 Sankyuk-dong, Buk-gu, Daegu 702-701, Korea
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Dong Jin
Department of Electronic Materials Engineering, Kyungpook National University, 1370 Sankyuk-dong, Buk-gu, Daegu 702-701, Korea
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