電気化学エッチングによるポーラスシリコン層の合成とシリコン太陽電池上への応用(テクニカルレポート)
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概要
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SiN_x thin film grown by plasma-enhanced chemical vapor deposition (PECVD) has conventionally been used as an antireflection layer of the silicon solar cell. In this work, a porous silicon (PS) layer formed by electrochemical etching was shaped on the surface of a crystalline silicon wafer for a simple alternative of anti-reflection coating (ARC). The etching solution was prepared by mixing HF and ethanol for efficient bubble elimination on the silicon surface during the etching process. The anodization of the silicon surface was performed under a constant current, and the process parameters, such as current density and etching time including volume fraction of HF to ethanol in the solution, were carefully tuned to minimize the surface reflectance of the CZ silicon wafer with sheet resistance of 35-40 Ω/□. The PS layer as an anti-reflection coating in the solar cell was compared with conventional PECVD SiN_x thin film by measuring the surface reflectance of the cell. Also, Photovoltaic I-V properties and the quantum efficiencies of the cells with PS layers were measured.
- 2007-05-01
著者
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KIM Jeong
Department of Information Electronics Engineering, Ewha Womans University
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MOON In
CTO Solar Cell TF, Samsung SDI Co., Ltd.
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LEE Moon
CTO Solar Cell TF, Samsung SDI Co., Ltd.
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KIM Dae
CTO Solar Cell TF, Samsung SDI Co., Ltd.
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Kim Jeong
Department Of Anatomy Wonkwang University School Of Medicine
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Kim Dae
Cto Solar Cell Tf Samsung Sdi Co. Ltd.
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Moon In
Cto Solar Cell Tf Samsung Sdi Co. Ltd.
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Lee Moon
Cto Solar Cell Tf Samsung Sdi Co. Ltd.
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Kim Jeong
Department Of Electronics Engineering Sejong University
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