プラズマCVD法で作製した窒化ケイ素薄膜の電荷密度に及ぼす高周波出力の効果(秋季シンポジウム若手研究者論文)

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Charge density is an important film characteristic that determines the quality of film surface passivation. In this study, a prediction model of charge density was constructed by using a neural network and generic algorithm. For a systematic modeling, plasma enhanced chemical vapor deposition process of silicon nitride films was characterized by means of a statistical experimental design. Effects of parameters under various radio frequency (rf) powers were examined under various plasma conditions. An increase in charge density was observed with increasing rf power over the entire range of SiH_4 flow rate as well as at lower N_2 flow rates or pressures. The effect of SiH_4 flow rate on charge density was opposite to that for N_2 flow rate given rf powers. For the variations in N_2 or SiH_4 flow rate, charge density seemed to be strongly correlated to N/Si ratio. Under the variations in pressure or N_2 flow rate, maintaining a lower pressure was beneficial in achieving a higher charge density. A pronounced rf power effect at smaller grain size was expected.
2007-11-01