Effect of Moisture on the Frequency-Dependent Current of an AlGaN/GaN High-Electron-Mobility Transistor
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概要
- 論文の詳細を見る
The effect of moisture on the current of an AlGaN/GaN high-electron-mobility transistor was investigated. When the gate voltage was swept from $-5$ to 0 V at a drain voltage of 7 V, the current decreased with the sweep frequency from 38 mA at 0.1 Hz to 15 mA at 100 kHz. However, the decrease was mitigated to 29 mA by moisturizing the ambient, and a marked current decrease in a pulsed operation was alleviated by moisture from 7.4 to 33 mA at 100 kHz with a 10% duty cycle. The binding of polarized H<sub>2</sub>O to negatively charged traps was proposed as the reason for the alleviation of the current degradation.
- 2011-09-25
著者
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Kim Jeong
Department Of Anatomy Wonkwang University School Of Medicine
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Yang Gye
Department of Semiconductor Science and Technology/Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea
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Shim Kyu-Hwan
Department of Semiconductor Science and Technology/Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea
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Yang Jeon
Department of Semiconductor Science and Technology/Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea
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Kim Jeong
Department of Semiconductor Science and Technology/Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea
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