Self-Formation of High-Density and High-Uniformity InAs Quantum Dots on Sb/GaAs Layers by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
Self-assembled InAs quantum dots (QDs) grown on Sb/GaAs buffer layers by molecular beam epitaxy were investigated to achieve high-density and high-uniformity QDs. The density of InAs QDs on Sb/GaAs layers was markedly higher than that of InAs QDs on conventional GaAs layers. The high-density nucleation of three-dimensional (3D) InAs islands was attributed to the formation of two-dimensional (2D) wirelike structures prior to 3D islanding. QD density was controlled from $3\times 10^{10}$ to $1\times 10^{11}$ cm-2 by changing Sb supply amount. In addition, the density of very large dots due to coalescence increased with increasing Sb supply amount. On Sb (0.6 atomic layers)/GaAs buffer layers, we obtained high-density and high-quality InAs QDs, which revealed a narrow photoluminescence linewidth of about 30–35 meV.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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Yamaguchi Koichi
Department of Cardiology, Shin-Nittetsu Muroran General Hospital
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太田 雅彦
電気通信大学電気通信学部電子工学科
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Kanto Toru
Department Of Electronic Engineering The University Of Electro-communications
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Ohta Masahiko
Department Of Chemistry And Biochemistry Graduate School Of Engineering Kyushu University
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Ohta Masahiko
Department Of Electronic Engineering The University Of Electro-communications
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Kanto Toru
Department of Electronic Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan
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Ohta Masahiko
Department of Electronic Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan
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