Self-Assembled InAs Quantum-Dot Chains on Self-Formed GaAs Mesa-Stripes by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
The self-formation of InAs quantum-dot chains (QDCs) was demonstrated on GaAs/InGaAs/GaAs(001) layers by molecular beam epitaxy (MBE). In the MBE growth of a GaAs layer on a corrugated InGaAs/GaAs buffer layer, mesa-stripe structures with the {211}A side wall were spontaneously formed along the [$1 \bar{1}0$] direction. InAs QDCs were formed on the GaAs mesa stripes along the [$1 \bar{1}0$] direction. In particular, uniform InAs QDCs were fabricated on the vicinal GaAs(001) substrate, misoriented toward the [110] direction. The self-formation of QDCs was attributed to the misfit dislocation and step structure.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-10-15
著者
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Yamaguchi Koichi
Department of Cardiology, Shin-Nittetsu Muroran General Hospital
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Kanto Toru
Department Of Electronic Engineering The University Of Electro-communications
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Kanto Toru
Department of Electronic Engineering, University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan
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