Stranski-Krastanov Growth of InAs Quantum Dots with Narrow Size Distribution
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概要
- 論文の詳細を見る
Coherently strained InAs quantum dots(QDs)with narrow inhomogeneous broadening were grown by molecular beam epitaxy(MBE)using the Stranski-Krastanov(SK)growth mode. The increase in the InAs dot size and decrease in the dot density were induced by surface migration enhancement due to the low arsenic pressure below 6 × 10^<-7> Torr. In addition, the low arsenic pressure and the low growth rate produced the self size-limiting effect, which was attributed to the inhibition of indium incorporation. As a result, the narrowest photoluminescence(PL)linewidth of 18.6 meV(14K)was successfully obtained from the single InAs/GaAs QD layer.
- 社団法人応用物理学会の論文
- 2000-12-01
著者
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Yamaguchi Koichi
Department of Cardiology, Shin-Nittetsu Muroran General Hospital
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KAIZU Toshiyuki
Department of Electronic Engineering, University of Electro-Communications
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Kaizu T
Univ. Electro‐communications Tokyo Jpn
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Kaizu Toshiyuki
Department Of Electronic Engineering University Of Electro-communications
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YUJOBO Kunihiko
Department of Electronic Engineering, University of Electro-Communications
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Yujobo Kunihiko
Department Of Electronic Engineering University Of Electro-communications
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