Control of GaSb/GaAs Quantum Nanostructures by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
GaSb quantum wells (QWs) and quantum dots (QDs) were fabricated on GaAs(001) surfaces by molecular beam epitaxy. By scanning transmission electron microscopy and photoluminescence (PL) measurements, their nanostructures were evaluated. One-monolayer-thick GaSb was precisely formed by the surface exchange reaction between As and Sb atoms, which was monitored by reflection high-energy electron-beam diffraction. In the Stranski-Krastanov growth of the GaSb QDs, low growth rate and low Sb4 pressure were effective conditions for suppressing size fluctuation. As a result, we could obtain the narrowest PL linewidth of 67 meV for GaSb/GaAs QDs.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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Yamaguchi Koichi
Department of Cardiology, Shin-Nittetsu Muroran General Hospital
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Iwasaki Seiki
Department Of Electronic Engineering The University Of Electro-communications
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Nakai Takanori
Department Of Electronic Engineering The University Of Electro-communications
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Nakai Takanori
Department of Electronic Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo 182-8585, Japan
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Iwasaki Seiki
Department of Electronic Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo 182-8585, Japan
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