Analysis of Sb–As Surface Exchange Reaction in Molecular Beam Epitaxy of GaSb/GaAs Quantum Wells

概要

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GaSb/GaAs quantum wells (QWs) were grown on the GaAs(001) substrate by molecular beam epitaxy (MBE), and their QW structures were analyzed using a kinetic model that takes into account the surface exchange reaction of As and Sb atoms during GaAs cap growth. The photoluminescence peak energy of GaSb/GaAs QWs depended on the growth temperature of the GaAs cap layer, and this dependence was explained by a broadening of the QW structure, due to the As–Sb exchange reaction. The calculated optical transition energy of the analyzed QW structure almost agreed with experimental results after adjusting the bowing parameter ($b_{\text{v}}$) for the valence band edge in GaAs1-xSbx alloys and the activation energy of the Sb–As surface exchange reaction ($E_{\text{Sb}}$, $E_{\text{As}}$). As the result, $b_{\text{v}}=0.67\pm 0.06$, $E_{\text{Sb}}=1.68\pm 0.01$ eV and $E_{\text{As}}=1.80\pm 0.01$ eV were obtained.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2005-06-15