Selective Self-Formation of InAs Quanttun Dots on Strained InGaAs Layers by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
InAs was grown on a strained InGaAs/GaAs(001) layer by molecular beam epitaxy. The critical thickness and the dot structure of the InAs were investigated as a function of the thickness of the InGaAs base layer. The critical thickness of the InAs layer increased with decreasing residual strain of the InGaAs surface. Chains of self-formed InAs dots were partially observed along the [110] direction. Tints selective self-formation of InAs dots was caused by a strain distribution and an anisotropy of the residual strain on the InGaAs surface.
- 社団法人応用物理学会の論文
- 1997-07-01
著者
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Yamaguchi Koichi
Department of Cardiology, Shin-Nittetsu Muroran General Hospital
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Hasegawa Hisashi
Department Of Electronic Engineering University Of Electro-communications
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Waki Eiji
Department Of Electronic Engineering University Of Electro-communications
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Yamaguchi Koichi
Department Of Electronic Engineering University Of Electro-communications
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