Self Size-Limiting Process of InAs Quantum Dots Grown by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
In the molecular beam epitaxy (MBE) growth of InAs quantum dots (QDs), we investigated the dot formation via the self size-limiting process. Accumulation of size-limited InAs QDs resulted in narrow inhomogeneous broadening of photoluminescence (PL) linewidth and low energy shift of PL peak position. Atomic force microscopy (AFM) and reflection high-energy electron-beam diffraction (RHEED) observations revealed the appearance of {136} facets on the side wall of size-limited InAs dots. It was proposed that the facet formation played an important role in the self size-limiting behavior.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-03-30
著者
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Yamaguchi Koichi
Department of Cardiology, Shin-Nittetsu Muroran General Hospital
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Kaizu Toshiyuki
Department Of Electronic Engineering University Of Electro-communications
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