Control of Self-Formed GaAs Nanoholes Combined with Embedded InAs Quantum Dots
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概要
- 論文の詳細を見る
We investigated the self-formation of GaAs nanoholes combined with embedded InAs quantum dots (QDs), grown by molecular beam epitaxy using the Stranski-Krastanov growth mode. After GaAs capping growth of uniform InAs QDs, GaAs nanoholes were naturally fabricated just above the embedded InAs dots by thermal annealing at 500°C. The self-formation of GaAs nanoholes is attributed to the detachment of unstable GaAs due to tensile strain during annealing. The nanohole structures affected the photoluminescence (PL) properties of InAs QDs and were strongly dependent on the thickness of the GaAs capping layer and the annealing time.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
-
Satoh Takayuki
Department Of Cardiovascular Control Kochi Medical School
-
Yamaguchi Koichi
Department of Cardiology, Shin-Nittetsu Muroran General Hospital
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Satoh Takayuki
Department of Electronic Engineering, University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan
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