Demonstrative Experiment for Single-Ion Implantation Technique Using Highly Charged Ions
スポンサーリンク
概要
- 論文の詳細を見る
When highly charged ions were implanted on a graphite surface with monitoring of secondary electrons emitted at the point of incidence, dot structures on the surface, as the imprint of ion incidence, were observed by a scanning tunneling microscope (STM). The number of events of secondary electron emission and the number of imprints coincided, which indicates that a method of detecting incident events of ion implantation of almost 100% efficiency has been established by using highly charged ions.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-02-15
著者
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OHTANI Shunsuke
Department of Physics,Sophia University
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Tona Masahide
Japan Science And Technology Agency
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Sakurai Makoto
Department Of Applied Chemistry College Of Engineering Chubu University
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Nakamura Nobuyuki
Institute for Laser Science, University of Electro-Communications, Chofu, Tokyo 182-8585, Japan
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Takahashi Satoshi
Institute for Laser Science, University of Electro-Communications, Chofu, Tokyo 182-8585, Japan
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Shibata Masa-aki
Institute for Laser Science, University of Electro-Communications, Chofu, Tokyo 182-8585, Japan
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Yamada Chikashi
Department of Applied Physics and Chemistry, University of Electro-Communications, Chofu, Tokyo 182-8585, Japan
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Yoshiyasu Nobuo
Department of Applied Physics and Chemistry, University of Electro-Communications, Chofu, Tokyo 182-8585, Japan
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Shimizu Hiroshi
ULVAC PHI Inc., Chigasaki, Kanagawa 253-0084, Japan
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Nagata Kazuo
Institute for Laser Science, University of Electro-Communications, Chofu, Tokyo 182-8585, Japan
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Tona Masahide
Japan Science and Technology Agency, Chofu, Tokyo 182-8585, Japan
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Ohtani Shunsuke
Department of Applied Physics and Chemistry, University of Electro-Communications, Chofu, Tokyo 182-8585, Japan
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NAKAMURA Nobuyuki
Institute for Laser Science, The University of Electro-Communications
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