High Performance 0.1 μm GaAs Pseudomorphic High Electron Mobility Transistors with Si Pulse-Doped Cap Layer for 77 GHz Car Radar Applications
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概要
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In this study, 0.1 μm double-recessed T-gate GaAs pseudomorphic high electron mobility transistors (PHEMT’s), in which an InGaAs layer and a Si pulse-doped layer in the cap structure are inserted, have been successfully fabricated. This cap structure improves ohmic contact. The ohmic contact resistance is as small as 0.07 $\Omega$mm, consequently the source resistance is reduced by about 20% compared to that of a conventional cap structure. This device shows good DC and microwave performance such as an extrinsic transconductance of 620 mS/mm, a maximum saturated drain current of 780 mA/mm, a cut-off frequency fT of 140 GHz and a maximum oscillation frequency of 260 GHz. The reverse breakdown is 5.7 V at a gate current density of 1 mA/mm. The maximum available gain is about 7 dB at 77 GHz. It is well suited for car radar monolithic microwave integrated circuits (MMICs).
- 2005-04-15
著者
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LEE Jaehak
WAVICS Inc.
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NOH Hunhee
School of Electrical Engineering, Seoul National University
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JANG Kyoungchul
School of Electrical Engineering, Seoul National University
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Seo Kwangseok
School of Electrical Engineer and Computer Science, Seoul National University, San 56-1, Shillim-dong, Kwanak-gu, Seoul 151-742, Republic of Korea
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Kim Sungwon
School of Electrical Engineer and Computer Science, Seoul National University, San 56-1, Shillim-dong, Kwanak-gu, Seoul 151-742, Republic of Korea
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Kim Sungwon
School of Electrical Engineering, Seoul National University, Shillim-dong, kwanak-gu, Seoul 151-742, Korea
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Lee JaeHak
WAVICS Inc. 4F Emerald Building, 1364-29 Seocho-dong, Seocho-gu, Seoul 137-863, Korea
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Jang Kyoungchul
School of Electrical Engineer and Computer Science, Seoul National University, San 56-1, Shillim-dong, Kwanak-gu, Seoul 151-742, Republic of Korea
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