Monostable-to-Bistable Transition Logic Element-Based Literal Gates Using Resonant Tunneling Diodes
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概要
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We demonstrate the novel and compact implementation of literal gates with one literal window and two literal windows using only resonant tunneling diodes (RTDs). The proposed circuit consists of only three RTDs and one resistor for one literal window and four RTDs and one resistor for two literal windows, with the configuration of a series-connected RTD pair and a series-connected RTD and a resistor. The operation of the newly proposed literal gate is based on a monostable-to-bistable transition logic element (MOBILE). The RTD pair is used for the MOBILE core circuit and the RTD and resistor pair is used for current modulation. The circuit configuration is markedly reduced compared with conventional literal gates using complementary metal oxide semiconductor (CMOS) or previously reported RTD-based literal gates.
- 2008-05-25
著者
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SEO Kwangseok
School of Electrical Engineering, Seoul National University
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Kim Hyungtae
School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Shillim-dong, Kwanak-gu, Seoul, 151-742, Korea
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Seo Kwangseok
School of Electrical Engineer and Computer Science, Seoul National University, San 56-1, Shillim-dong, Kwanak-gu, Seoul 151-742, Republic of Korea
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